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Specification of monocrystalline silicon scrap. Parameter Unit of measure Parameter point The minimum weight of a piece, not less gram 30 Polarity of conductivity P-type (Boron) Specific resistance (R) Ohm?m 0,5? Concentration of carbon, no more at/cm3 1?017 Purity 99,9999 (6N) Has no impurities of graphite, quartz, silicon carbide or other mechanical impurities. The surface of the pieces has no visible traces of pollution. Specification of silicon polycrystalline. Dirt: Concentration I type II type Acceptors (Boron) <0,1 ppba <1 ppba Donors (Phosphorus) <0,5 ppba <2 ppba Carbon <0,1 ppma <1 ppma Shape of polycrystalline silicon: rod or lump Sizes of pieces for lump polycrystalline silicon: < 3 mm No more than 2% 3mm-125mm Not less than 98% The typical size of pieces 65- 125 mm On the surface of the pieces and lumps silicon polycrystalline there are no traces of oxides, oxidized rings of growth on the break or cut as well as there are no foreign particulates and pollutions. If you can offer it please do not be late |
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